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Boron phosphide

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Boron phosphide

Identifiers
CAS number	20205-91-8^Y
PubChem	88409
Properties
Molecular formula	BP
Molar mass	41.7855 g/mol
Appearance	maroon powder
Density	2.90 g/cm³
Melting point	1100 °C (decomposes)
Band gap	2.1 eV (indirect, 300 K)^[1]
Thermal conductivity	4 W/(cm·K) (300 K)
Refractive index (n_D)	3.0 (0.63 µm)^[1]
Structure
Crystal structure	Zinc blende
Space group	F43m
Coordination geometry	Tetrahedral
Y (verify) (what is: Y/N?) Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa)
Infobox references

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B₁₂P₂) is a chemical compound of boron and phosphorus. It is a semiconductor.^[2]

1 History
2 Appearance
3 Chemical properties
4 Physical properties
5 See also
6 References
7 Further reading

History

Crystals of boron phosphide were synthesized by Henri Moissan as early as in 1891.^[3]

Appearance

Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red ^[4].

Chemical properties

BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.^[4].

Physical properties

Some properties of BP are listed below:^[4]^[1]

lattice constant 0.45383 nm
coefficient of thermal expansion 3.65×10⁻⁶ /°C (400 K)
heat capacity C_P ~ 0.8 J/(g·K) (300 K)
Debye temperature = 985 K
Bulk modulus 152 GPa
relatively high microhardness of 32 GPa (100 g load).
electron and hole mobilities of a few hundred cm²/(V·s) (up to 500 for holes at 300 K)

References

^ ^a ^b ^c Madelung, O. (2004). Semiconductors: Data Handbook. Birkhäuser. pp. 84–86. ISBN 978-3-540-40488-0. http://books.google.com/books?id=v_8sMfNAcA4C&pg=PA84.
^ Popper, P.; Ingles, T. A. (1957). "Boron Phosphide, a III–V Compound of Zinc-Blende Structure". Nature 179: 1075. doi:10.1038/1791075a0.
^ Moissan, H. (1891). "Préparation et Propriétés des Phosphures de Bore". Comptes Rendus 113: 726–729. http://visualiseur.bnf.fr/CadresFenetre?O=NUMM-3069&I=726&M=tdm.
^ ^a ^b ^c Berger, L. I. (1996). Semiconductor Materials. CRC Press. p. 116. ISBN 978-0-8493-8912-2. http://books.google.com/books?id=Ty5Ymlg_Mh0C&lpg=PP1&ots=K4Y9uyUkTt&dq=ISBN%200849389127&pg=PA116.

King, R. B., ed. (1999). Boron Chemistry at the Millennium. Elsevier Science & Technology. ISBN 0-444-72006-5.
US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof", issued 2004-12-14, assigned to Showa Denko
Stone, B.; Hill, D. (1960). "Semiconducting Properties of Cubic Boron Phosphide". Physical Review Letter 4 (6): 282–284. doi:10.1103/PhysRevLett.4.282.